Sb2Se3 sensitized inorganic–organic heterojunction solar cells fabricated using a single-source precursor. Surface passivation of high-efficiency silicon solar cells by atomic-layer-deposited Al2O3. Colloidal-quantum-dot photovoltaics using atomic-ligand passivation.
Unique properties of halide perovskites as possible origins of the superior solar cell performance. Nanoscale imaging of photocurrent and efficiency in CdTe solar cells. Defect physics of the CuInSe2 chalcopyrite semiconductor. Highly improved Sb2S3 sensitized-inorganic-organic heterojunction solar cells and quantification of traps by deep-level transient spectroscopy. Properties of electronic potential barriers at grain boundaries in Cu(In,Ga)Se2 thin films. Potassium-induced surface modification of Cu(In,Ga)Se2 thin films for high-efficiency solar cells. Synthesis of CuInS2, CuInSe2, and Cu(In xGa1− x)Se2 (CIGS) nanocrystal ‘links’ for printable photovoltaics. Doping of polycrystalline CdTe for high-efficiency solar cells on flexible metal foil. The light and shade of perovskite solar cells. Device characteristics of a 10.1% hydrazine-processed Cu2ZnSn(Se,S)4 solar cell. Classification of lattice defects in the kesterite Cu2ZnSnS4 and Cu2ZnSnSe4 earth-abundant solar cell absorbers. Solvent engineering for high-performance inorganic–organic hybrid perovskite solar cells. Device characteristics of CZTSSe thin-film solar cells with 12.6% efficiency. Our results suggest that the family of one-dimensional crystals, including Sb 2Se 3, SbSeI and Bi 2S 3, show promise in photovoltaic applications. Using a simple and fast ( ∼1 μm min –1) rapid thermal evaporation process, we oriented crystal growth perpendicular to the substrate, and produced Sb 2Se 3 thin-film solar cells with a certified device efficiency of 5.6%. Here we report that antimony selenide (Sb 2Se 3)-a simple, non-toxic and low-cost material with an optimal solar bandgap of ∼1.1 eV-exhibits intrinsically benign GBs because of its one-dimensional crystal structure. Thus, the growth of single-crystalline materials or the passivation of defects at the GBs is required to address this problem, which introduces an added processing complexity and cost. The crystals’ three-dimensional structure means that dangling bonds inevitably exist at the grain boundaries (GBs), which significantly degrades the device performance via recombination losses. Solar cells based on inorganic absorbers, such as Si, GaAs, CdTe and Cu(In,Ga)Se 2, permit a high device efficiency and stability.